Research

Publications

*The list contains only the publications affiliating HKU (Physics) or publications by members of our departments (sorted by publication year and the name of the Journal).

Electrical Properties of ZnO Nanorods Studied by Conductive Atomic Force Microscopy

I. Beinik, M. Kratzer, A. Wachauer, L. Wang, R.T. Lechner, C. Teichert, C. Motz, Y.F. Hsu, A.B. Djurišić

Journal of Applied Physics, Vol.110, 052005:1-7, 2011

Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation

J.Q. Ning, S.J. Xu, X.Z. Ruan, Y. Ji, H.Z. Zheng, W.D. Sheng, H.C. Liu

Journal of Applied Physics, Vol.110, 054320:1-5, 2011

Ion-Implantation Induced Nano Distortion Layer and its Influence on Nonlinear Optical Properties of ZnO Single Crystals

C.C. Zheng, S.J. Xu, J.Q. Ning, Y.N. Chen, X.H. Lu, F.C.C. Ling, C.M. Che, G.Y. Gao, J.H. Hao, G. Brauer, W. Anwand

Journal of Applied Physics, Vol.110, 083102:1-6, 2011

Raman and Photoluminescence Characterization of Focused Ion Beam Patterned InGaN/GaN Multi-Quantum-Wells Nanopillar Array

X.H. Wang, J.Q. Ning, S.J. Xu, H.W. Choi

Journal of Applied Physics, Vol.110, 093111:1-6, 2011

Effect of the Starting Surfaces of GaN on Defect Formation in Epitaxial Co Thin Films

H.D. Li, T.L. Wong, N. Wang, J. Wang, Q. Li, M.H. Xie

Journal of Applied Physics, Vol.110, 093501:1-4, 2011

Growth of GaN on Si(111): Surfaces and Crystallinity of the Epifilms and the Transport Behavior of GaN/Si Heterojunctions

Z.J. Xu, L.X. Zhang, H.T. He, J.N. Wang, M.H. Xie

Journal of Applied Physics, Vol.110, 093514:1-7, 2011