Abstract
The development of silicon carbide (SiC) crystal growth technology over the last few decades has brought about tremendous progress in SiC power devices. 150 mm diameter SiC substrates with a low dislocation density are currently commercially available, and 4H-SiC substrates in 200 mm diameter are almost ready for the market. This seminar is aimed at explaining the recent development of the technology, particularly focusing on the diameter enlargement and quality improvement of SiC crystals. The seminar also tries to discuss the fundamental materials science behind the SiC crystal growth. A better understanding of the SiC crystal growth processes is indispensable for implementing high performance and reliable SiC power devices with reasonable costs.
Anyone interested is welcome to attend.