Abstract
On many occasions, structural defects bare a negative connotation, provoking efforts to reduce their contents. On the other hand, many unique material properties may become possible only with defects in materials. In this talk, I review our recent observation of the disorder-induced ordering in gallium oxide controlled by the accumulation of intrinsic defects (Physical Review Letters 128, 15704 (2022) and Nature Communications, in-review (2024) and arXiv:2409.17829). Amazingly, this transformation, results in remarkably high radiation tolerance of the gamma-polymorph obtained by this modification (Nature Communications 14, 4855 (2023)) and interpret the mechanisms (Physical Review Letters, in-review (2024) and arXiv:2401.07675v3). Altogether, it comprises an interesting story of the disorder-controlled modification in materials not reported in literature before these observations.
Biography
Andrej Kuznetsov was awarded with a Ph.D. degree in physics from the Russian Academy of Sciences in 1992 and accomplished his habilitation in solid state electronics in 2000 at the Royal Institute of Technology in Sweden. In 2001 he joined the University of Oslo in Norway as an associate professor at the Department of Physics, where he was subsequently promoted to a full professor rank in 2003. From 2018 he acts as the Chair of the Centre of Excellence: Light and Electricity from Novel Semiconductors (LENS) - as a part of the Centre for Materials Science and Nanotechnology at UiO. The focus is to understand novel semiconductors, searching for new fundamental phenomena and enabling new device functionalities.
Anyone interested is welcome to attend.