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The Interacting Semiconductor Hole Gas

Speaker Professor John Schliemann
Affiliation Institute for Theoretical Physics, University of Regensburg, Germany
Date December 2, 2011 (Fri)
Time 4:30 p.m.
Venue Room 522, 5/F, Chong Yuet Ming Physics Building, HKU

Abstract:

I will discuss the homogeneous interacting hole gas in p-doped bulk III-V semiconductors. The structure of the valence band is modeled by Luttinger’s Hamiltonian in the spherical approximation, giving rise to heavy and light hole dispersion branches, and the Coulomb repulsion is taken into account via a self-consistent Hartree-Fock treatment. As a nontrivial feature of the model, the self-consistent solutions of the Hartree-Fock equations can be found in an almost purely analytical fashion, which is not the case for other types of effective spin-orbit coupling terms. In particular, the Coulomb interaction renormalizes the Fermi wave numbers for heavy and light holes. As a consequence, the ground state energy found in the self-consistent Hartree-Fock approach and the result from lowest-order perturbation theory do not agree. Moreover, I will report on a recent study of the dielectric function of the homogeneous hole gas in p-doped zinc-blende III-V bulk semiconductors within random phase approximation. In the static limit we find a beating of Friedel oscillations between the two Fermi momenta for heavy and light holes, while at large frequencies dramatic corrections to the plasmon dispersion occur.

Coffee and tea will be served 20 minutes prior to the seminar.