Abstract
Zinc oxide (ZnO), a wide band gap semiconductor material with band gap Eg=3.37 eV at 300 K and a large exciton binding energy of 60 meV, has attracted great attention from the researchers of worldwide scope for its potential application in the fields of spintronics and optoelectronics. The deep level defects significantly influence the electronic and optical properties of semiconductor materials. However, the research of deep levels in ZnO single crystal materials is much far from complete. Based on this fact, the intrinsic deep level defects in particle-irradiated ZnO single crystal were studied mainly using the technique of deep level transient spectroscopy (DLTS) and photoluminescence (PL). The results showed that the deep level with Ea~0.92 eV was indentified in the helium-implanted ZnO materials, which was tentatively assigned to be the oxygen vacancy (VO). The electron irradiation induced a deep level with Ea~0.59 eV into ZnO. Helium ions implantation also introduced defects photoluminescence at 1.90 eV into ZnO which might be associated with the DAP recombination, while electron irradiation might restrain the green luminescence of ZnO single crystal.
Anyone interested is welcome to attend.