Abstract
With the advent of the post Moore era, modern electronics require further device miniaturization of all electronic components, particularly ferroelectric memories, due to the need for massive data storage. This demand stimulates the exploration of robust switchable ferroelectric polarizations at the atomic scale. In this scenario, van der Waals ferroelectrics have recently gained increasing attention because of their stable layered structure at nanometer thickness, offering the opportunity to realize two-dimensional ferroelectricity that is long-sought in conventional thin film ferroelectrics. This seminar will mainly focus on the fundamentals of intrinsic two-dimensional ferroelectricity, the emergence of artificial stacking ferroelectricity, and related protype devices with exotic functions. In addition, the unique polarization control in ultrathin van der Waals ferroelectrics will be discussed.
References:
- S. Wan, Y. Li & H. Zeng et al., Adv. Funct. Mater. 1808606 (2019).
- Y. Li, M. Gong & H. Zeng et al., Nat. Commun. 12:5896 (2021).
- Y. Wan, L. Dai, H. Zeng & E. Kan et al., Phys. Rev. Lett. 128, 067601, (2022).
- C. Chen, Z. Fu & H. Zeng et al., Nano Lett. 22 (8), 3275–3282 (2022).
- H. Liu, Q. Lai & H. Zeng et al., Nat. Commun. 15:4556 (2024).
Biography
Hualing Zeng is currently a full professor in the Hefei National Research Center for Physical Science at the Microscale at the University of Science and Technology of China. He received a Bachelor's degree from the University of Science and Technology of China in 2006 and a Ph.D. degree in condensed matter physics from University of Hong Kong in 2011. His research mainly focuses on the experimental study of two-dimensional semiconductors and ferroelectrics. He has published more than 60 peer review papers in prestigious journals such as Nature Nanotechnology, Nature Communications, Physical Review X, and Physical Review Letters et al., with a total citation of more than 8,000 times.
Anyone interested is welcome to attend.