Abstract
Moiré material has been of intense interest for the range of correlated electron phenomena they exhibit and for the high degree of experimental tunability. Recently, fractional Chern insulators (FCI) have been experimentally observed in a couple of moiré materials, including twisted TMD and moiré graphene systems. This talk presents an exact geometric criterion for the stability of FCI in general flatbands and discuss its implications to moiré systems. The common wisdom to find FCI is to engineer material to approach the limit with uniform Berry curvature. Here we will disprove such common lore by showing a new theory (ideal band) that emphasizes the importance of quantum metric. Ideal band is proved to allow exact FCI ground states for arbitrary amount of Berry curvature fluctuation and is useful for future material engineering in searching for fractionalized phases in moiré and other platforms.
Biography
Anyone interested is welcome to attend.