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Silicon carbide (SiC) MOSFETs have experienced rapid development in the past two decades, and many SiC devices have been commercialized. SiC has a lot of intrinsic advantages over Si, for instance, SiC has higher critical electric field, higher thermal conductivity and the device based on SiC can operate at higher switching frequency, and higher temperature. With power electronics reliability consideration in mind, semiconductor devices are also evaluated for high power applications, therefore in such harsh environment, one of the key aspects need to be improved is the gate dielectric. While SiC can be thermally oxidized on its surface to produce SiO₂ as is conventional in the silicon industry, a fundamental inherent drawback of SiO₂ is its low dielectric constant, which is about 2.5 times lower than that of the SiC and also possesses poor interface properties at the SiO₂/SiC junction. This leads to the device should operate at an electric field far below the SiC material breakdown field (3 MV/cm) in order to avoid premature SiO₂ gate breakdown. Therefore, it is of great significance to develop new dielectrics with high dielectric constant (high k) at least similar to that of the SiC to fully utilize the potential of SiC MOSFET.