Abstract
Recent research has suggested that metal oxides have potential applications in new generation microelectronic devices. Specifically, high dielectric constant metal oxides are considered as possible candidate for replacing silicon dioxide as the insulating gate material in metal-oxide field effect transistors (MOSFETs) on which modern electronic devices rely.
The dielectric properties of pulsed laser deposited antimony oxide (Sb2O3) and aluminium oxide (Al2O3) thin film will be focused on in this presentation. Our result reveals that the dielectric constant of Sb2O3 is on the orders of 100 and remains almost uniform over a large frequency range. Furthermore, the dielectric loss of the Sb2O3 thin film is found to have low values which renders this thin film materials practically useful. After obtaining such promising results, electrical impedance of the thin film is analysed and discussed. Similar experimental strategy is applied to aluminium oxide thin film.
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