Abstract
Indium Selenide is a promising semiconductor material with high mobility and largely tunable bandgap. However, the optical characterization of InSe is harder than other materials since its bandgap transition is extremely weak for in-plane polarized light. Here we show an measurement technique of the gate-modulated differential reflectance, which is a versatile tool to study the physics of exciton in InSe.
The “shift current” concept comes with bulk photovoltaic effect, which is a nonlinear optical effect that generates photocurrent in nonlinear materials without the presence of an external electric field. Indium Selenide, with strong nonlinearity, can serve as a good platform for shift current generation. The second part of my work focus on the shift current measurement.
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