Abstract
Zinc oxide (ZnO) and gallium oxide (Ga2O3), as novel wide band gap semiconductor materials have unique advantages such as wide band gap, low preparation cost, environmentally friendly and high exciton binding energy. These characteristics make them suitable for deep blue/UV light-emitting diodes devices, laser and photodetectors. The investigations on wide band gap semiconductor materials become a research hotspot and they have received great attention from the scientific and industrial communities in recent years. We mainly focus on the wide band gap semiconductor materials of ZnO and Ga2O3 films. Their electrical properties, dielectric properties, defect distribution, electronic band structure and their applications in organic light emitting diodes (OLEDs) and solar blind UV detectors are systematically studied.
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