Abstract
Transparent conducting oxides (TCO) have attracted great attention since the first demonstration in 1907 by Baedeker. TCO thin films with high transparency and electrical conductivity have been widely used in optoelectronic devices, such as thin-film transistors, perovskite solar cells, organic light-emitting diodes (OLEDs) and quantum dot light emitting diodes (QLEDs). In the area of optoelectronic devices, transmittance and conductivity are two important factors that affect device performance. Rare earth element-Erbium (Er) doped ZnO (ErZO) thin films were deposited on glass substrates by pulsed laser deposition (PLD). The effect of Er doping concentration on photoelectric properties of ErZO thin films was investigated in the range of 0-2.0 wt.%. The Er doping resulted in the improvement of n-type conductivity as compared with intrinsic ZnO thin films. The optimized ErZO thin films present the low resistivity of 3.4×10−4 Ω/cm, high carrier concentration of 5.9×1020 /cm3 and high visible optical transmittance (~93%) when the Er content is 1.0 wt.%. The ErZO thin films were used as transparent anodes to fabricate organic light-emitting diodes (OLEDs). Impressively, with the ErZO as anode, the current efficiency of the OLEDs device can reach as high as 86.5 cd/A, which was increased by 14% when compared with the reference OLEDs device (76.0 cd/A) using ITO as anode.
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