Abstract
Two-dimensional material has appeared in our sight and attracted great interests since graphene was successfully fabricated in 2004. They have many novel properties, such as the transition from indirect to direct band gap with decreasing number of layers, and the moire pattern induced properties resulting from different stacking orders. This provides 2D material with great potential in electronics applications. Compared to other synthesis methods, Molecular Beam Epitaxy (MBE) has the advantage of precise thickness and depositing rate control. Scanning Tunneling Microscopy (STM) is frequently used to study the electronic properties. Based on tunneling principle, STM can provide information about the sample surface morphology in atomic scale as well as its electronic density of states. In this research, we focus on 2D material system such as TMDCs, MoSe2 and GaSe, and their nano as well as heterostructures, using MBE and STM. We hope to discover new properties and phenomena and underpin the physics in 2D materials.
Anyone interested is welcome to attend.