Abstract
IV-VI compounds arouse great interests in 2D materials research. A number of theoretical studies suggested that some of the IV-VI compounds exist in layered form and have some attractive properties for optical and optoelectronic applications. On the other hand, this material system has not drawn much attention in experiment. Growth of IV-VI by Molecular-Beam Epitaxy （MBE） is thus an interesting and original endeavor to test the theoretical predictions. We plan to epitaxially grow GeSe/GeTe by MBE and if successful, characterize their electronic properties by STM, ARP-ES, STEM, for example. I will discuss the significance and progress of this project, specify the challenges and future prospect of this material system.
Anyone interested is welcome to attend.