Abstract
Group IV and Group V arouse great interests in 2D materials area. Many articles predicted some of IV-V compounds exist in layered form and have some properties especially attractive in optical and transport applications. These IV-V materials still have not drawn main attention in experimental research. So growth experiments by Molecular-Beam Epitaxy （MBE） will be an interesting and original endeavor to test the theoretical prediction. We plan to epitaxially grow GeAs/GeN/GeP/GeSb/SiP by MBE and if successful, characterize their electronic properties by STM, ARPES, STEM, for example. I will discuss the significance of this project and specify the steps of the growth process.
Anyone interested is welcome to attend.