Abstract
Searching for colossal permittivity (CP, ε>1000) material to meet the industry application, such as high-density energy storage system and the miniaturization of electric devices, many researchers try to find a new way to design CP material. Traditionally, some ways are applied to design CP. For example, one is named Ferroelectric mechanism. And another one is called Internal boundary layer capacitor. However, materials, derived from these two mechanisms don’t own good temperature- or frequency- stability. Fortunately, a new way, named electron-pinned defect dipoles mechanism has been proposed in TiO2 ceramics (Nature Mat). In this mechanism, a defect structure, caused by the acceptor and donor doping, could optimize the dielectric property.
However, this new way inspires us to transfer this model to ZnO film. So, with acceptor and donor doping, a ZnO-based material with multifunctional property, including CDC and transparency etc., could be obtained. Furthermore, this project aims to clarify the correlation between the defect structure and CDC property. With the novel CDC property, ZnO-based film may have potential application in transistors as gate dielectric material.
Anyone interested is welcome to attend.