Abstract
V(Bi, Sb)-VI(Se, Te) compounds are candidates of three-dimensional (3D) topological insulators, which have been studied extensively due to the new physics, novel properties and the promises for quantum computing applications. Three of the compounds have been confirmed experimentally to be the non-trivial topological insulators while Sb2Se3 is of the trivial phase. It is however also predicted that Sb2Se3 can be tuned into topological non-trivial phase via strain or proximity effect. The reversed topological phase transition has further been suggested in Bi2Se3 by applying a tensile strain. Motivated by these theoretical predictions, we have performed an experimental study of strained Sb2Se3 and Bi2Se3 films grown by molecular-beam epitaxy.
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