Abstract
The n-ZnO/p-GaN were fabricated by growing n-type ZnO layer on metal organic chemical vapor deposition grown GaN/Sapphire substrate by pulsed laser deposition technique. The electroluminescence (EL) spectrum obtained from the n-ZnO/p-GaN displays a broad emission at 560 nm originating from ZnO and a weak emission at 440 nm from GaN. We are using Zn0.60Mg0.40O as a sandwich layer to enhance the electroluminescence intensity by suppress formation of GaOx interfacial layer and the confinement effect rendered by the Zn0.60Mg0.40O potential barrier layer. A systematic study of optical and structural properties of Zn0.60Mg0.40O grown on sapphire substrate were performed to optimize the band gap. It has been found that samples grown in vacuum have large band gap compared to the other oxygen partial pressures. So, Zn0.60Mg0.40O grown at 0 Pa will be used as a sandwich layer between ZnO and GaN. To further enhance the electroluminescence from ZnO based light emitting diode a thin layer of silver nanoparticles will also be inserted on top of the interfacial layer.
Anyone interested is welcome to attend.