Abstract
ZnO is a promising multifunctional material receiving remarkable interest on behalf of its unique fundamental properties and potential technological applications. In this talk two recent demonstrations will be reviewed: (i) measurement of intrinsic defect energetics in ZnO using isotopic [1] or fast diffusing tracers [2,3] and (ii) optoelectronic properties on ZnO/ZnCdO graded heterostructures and multiple quantum wells (MQWs) – see an illustration below [4,5]. In addition, perspectives of using polarization phenomena in ZnO-based heterostructures for so called polarization induced doping [6] will be analyzed.
[1] A.Yu. Azarov, V. Venkatachalapathy, Z.X. Mei, L. Liu, X.L. Du, A. Galeckas, and A. Kuznetsov, Phys.Rev.Lett, in review
[2] P.T. Neuvonen, L. Vines, B.G. Svensson, and A.Yu. Kuznetsov, Phys.Rev.Lett. 110, 15501 (2013)
[3] A. Yu. Azarov, P.T. Neuvonen, K.E. Knutsen, L. Vines, B.G. Svensson, and A.Yu. Kuznetsov, Phys. Rev. Lett. 110,175503 (2013)
[4] M. Trunk, A. Galeckas, V. Venkatachalapathy, A. Yu. Azarov, and A. Yu. Kuznetsov, Appl.Phys.Lett. 102, 191916 (2013)
[5] V. Venkatachalapathy, A. Galeckas and A. Yu. Kuznetsov, Solar Energy, 106, 82 (2014)
[6] as demonstrated in GaN/AlGaN by J. Simon et al., Science 327, 60 (2010)