Abstract
Transparent conductive oxides – TCO – are known as critical components in many different technologies, as highlighted by charismatic examples of using TCO (and in particular ZnO) in transparent electronics and photovoltaics. Concurrently, in spite of a huge research effort dedicated to ZnO, it may be puzzling to learn that the access to experimental data on defect formation/migration energies in ZnO is very limited. Availability (and continuously enhancing accuracy) of theoretical data helps, but systematic experimental verification is still missing. In its turn, self-diffusion measurements, e.g. using isotopic tracers – to make it distinguishable from the matrix elements – may be one of a few direct ways to assess energetics of point defects mediating the diffusion. Moreover, complementary data may be obtained measuring the diffusion of other tracers, e.g. Li as recently reported in literature (PRL 110, 15501(2013)). The talk will focus of our recent progress of using 70Zn and Li diffusion tracers to investigate defects in ZnO.