Abstract
The ever increasing demands for compact, high-speed, low power consumption and low cost electronics and photonics have driven researchers looking into new materials and their combinations. For microelectronics, the ITRS has identified several potential high channel mobility materials such as III-Vs for n-MOS, Ge for p-MOS and graphene. For short distance data communication, Si photonics is considered as the promising solution where the light emitters would most likely use active materials other than silicon. These applications require hetero- and nano-structures of dissimilar materials to be integrated onto Si substrates. In this presentation, I will introduce the research activities on compound semiconductors at SIMIT with a few examples on epitaxial growth of tensile strained Ge, InAs quantum dot lasers on Ge substrates, semiconductor-compatible monolithic synthesis of graphene and Bi2Te3 topological insulators which have potentials for future spintronics applications. In addition, I will present some results on dilute bismides that are of potentials for IR optoelectronics.
Coffee and tea will be served 20 minutes prior to the seminar.