Abstract
ZnO is also a transparent conducting oxide (TCO) material, as been reported in literatures, researchers try to improve the properties of TCO by introducing impurities (In, Al, Ga, N, P, As, F). In contrast, doping ZnO with Ga (Ga/ZnO) has been studied mainly for transparent conductor, which can be used in solar cells. High optical transparency has been obtained by doping Ga, almost reach to 90%, which is regarded as an alternative to ITO. However, most research is focus on how to generate high quality Ga/ZnO, but giving little concentration on nano-scale defects, the point defects are still unknown nowadays. On the other hand, the properties may be improved effectively if the defects in material (VO, VZn, Oi, Zni, GaZn, Gai) are known clearly. It is obvious that the defects will have some difference if Ga/ZnO is prepared with different procedure. As a result, it is necessary to compare the native defects by varying the method. On the other hand, native defects in Ga/ZnO are sensitive with oxygen pressure, which is a good way to determine VO, VZn, Oi, Zni.
In this work, we will try to prepare Ga/ZnO by using magneto-sputtering and pulse laser deposition (PLD), different quality of Ga/ZnO will be obtained and be contrasted. And we will also vary the oxygen pressure in PLD experiment. The photoluminescence (PL) is a useful tool to determine some certain point defects, so we compare the PL peak to get the information of point defects.