Abstract
Two dimensional systems, by the virtue of their novel material properties and excellent electrostatic integrity, provide immense opportunities not only to have fundamental physics but also to solve semiconducting technological problems. Atomistically thin layered materials like graphene, hexagonal boron nitride and the more recently the rich family of transition metal dichalcogenides (TMDs) comprising of MoS2, WS2, MoSe2, WSe2 and many more are prime examples of such two dimensional systems.
Molybdenum diselenide (i.e. MoSe2) is one of prototypical semiconducting TMD that has been attracting intensive interest owing to enhanced photoluminescence due to sizable direct band gap, spin-valley coupling and the promise for electronic devices. Due to its fascinating and unique physical properties, it has received significant attention recently for next generation electronics and valleytronic applications. However, the synthesis of scalable MoSe2 monolayers with high quality is still a challenge. Chemical vapor deposition (i.e. CVD) has been one of the most practical methods for synthesizing large-size TMDs thin layers.
In this talk, I propose to use wafer-scale synthesis methods via CVD on silicon dioxide/silicon (i.e. SiO2/Si) substrate for MoSe2/MoS2/WS2/WSe2, alloy materials and heterostructure design and growth. I aim for reliable production of atomically thin 2D TMDs with uniform properties which is essential for translating their new optoelectronic and valleytronic properties into applications.