Abstract
The surface of topological insulator is metallic conductor and its bulk is insulator. This property originates from its peculiar electronic band structure and protected by certain symmetries like time reversal symmetry or mirror symmetry. Both its profound physical connotation and potential applications are attractive to scientific community. Three research aspects will be discussed: a, Tuning topological state using strain generated by the lattice mismatch between the epi-film and the substrate; b, Growth and characterization on the interface of topological insulator; c, Growth of different facets of topological crystalline insulators (TCI). Molecular beam epitaxy as the crystalline thin film growth technique plays the central role in the proposed research, and relevant characterization techniques are involved.