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Magnetoresistance in Spintronic Devices based on Novel Magnetic Materials

Speaker Dr. Bin Li
Affiliation Massachusetts Institute of Technology
Date September 23, 2013 (Mon)
Time 4:30 p.m.
Venue Room 522, 5/F, Chong Yuet Ming Physics Building, HKU

Abstract

In this talk, I will present recent results of observing magnetoresistance (MR) in spintronic devices based on novel magnetic materials. I will focus on two materials: organic-based magnet V[TCNE]x (TCNE: tetracyanoethylene, x~2) and ferromagnetic insulator EuS. With newly developed deposition technique, we demonstrate an all-organic-based spin valve with V[TCNE]x and observed clear MR, which can potentially be used to develop light-weight, flexible, low-cost spintronic devices. I will also introduce the exchange interaction at the FI/S (FI: ferromagnetic insulator, S: superconductor) interface and a superconducting spin switch with infinite MR. Our results is the first experimental realization of the De Gennes’s theoretical model [De Gennes, Phys. Lett. 23, 10 (1966)].

Coffee and tea will be served 20 minutes prior to the seminar.