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Seminars

Kondo Effect in bulk 3D Topological Insulators

Speaker Prof. Yshai Avishai
Affiliation Ben Gurion University and Hong Kong University of Science and Technology
Date January 16, 2012 (Wed)
Time 4:00 p.m.
Venue Room 522, 5/F, Chong Yuet Ming Physics Building, HKU

Abstract

In a recent paper it was shown that when an Anderson impurity (d) is immersed in a bulk 3D topological insulator it gives rise to the formation of in-gap bound state (f). This scenario may be described by an Anderson model with two strongly correlated impurities, d and f where the d impurity is hybridized with the (inverted) band electrons while the f impurity interacts only with the d impurity. In this talk I will present preliminary results pertaining to the corresponding low energy Kondo physics in the weak coupling regime. In particular, distinction with respect the Kondo effect in real metals will be stressed and the analogy with the physics of transport through double quantum dot will be employed.

Coffee and tea will be served 20 minutes prior to the seminar.