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Past Events
Public Seminar of RPg Student:
Resistive Switching on PLD Grown Cu Doped ZnO Materials
| Speaker: | Mr. Lok Ping HO |
| Affiliation: | The University of Hong Kong |
| Date: | August 8, 2017 (Tuesday) |
| Time: | 10:00 a.m. |
| Venue: | Rm 522, 5/F, Chong Yuet Ming Physics Building, HKU |
Abstract
In recent years, there has been a wide interest in studying the resistive switching effects in metal-semiconductor-metal (MSM) devices due to its possibility in developing the next generation non-volatile memory devices (NVM). A typical resistive switching device can be characterized by two distinctive resistance states, namely high resistance state (HRS) and low resistance state (LRS). These two different states can be switched reversibly by applying an external voltage across the device. After switching, the device can stay at the particular resistance state even if the external voltage is removed.
Resistive switching behaviour have been observed in various types of materials including binary transition metal oxides (TMOs), perovskite-type complex TMOs, large band gap high-k dielectrics, graphene oxides and higher chalcogenides. Although enormous number of researches has been conducted in resistive switching with different materials, the switching mechanism is not fully understood. Further study is needed to investigate the physics of resistive switching.
In this seminar, the resistive switching behaviour of copper doped zinc oxide will be presented. The Cu:ZnO thin filmsaregrown with pulse laser deposition method at different oxygen partial pressures. It is observed that the film growth at an oxygen partial pressure of 0.03 Pa gives stable resistive switching behaviour.The optical propertyof the device ischaracterized by photoluminescencetechnique.
Anyone interested is welcome to attend.