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Twisted magnetic topological insulator: When momentum-space topology meets real-space topology?
Prof. G. Chen's research
Prof. G. Chen's research

Publications

M.H. Xie

*The list contains only the publications affiliating HKU (Physics) since 2007 or since the author joined HKU (sorted by publication year and the name of the Journal).


  • 1 Tuning the atomic and electronic structures of mirror twin boundaries in molecular beam epitaxy grown MoSe2 monolayers via rhenium doping
    Z.B. Yu, Y.P. Xia, H.-P. Komsa, J.Q. Zhang, M.H. Xie, C.H. Jin
    2D Materials, Vol.11(2), 025010:1-12, 2024
  • 2 Formation mechanism of mirror twin grain boundaries in molecular beam epitaxy grown monolayer WSe2–MoSe2 lateral heterojunctions
    Z.B. Yu, Y.W. Dai, H.-P. Komsa, X.B. Ren, M.F. Yuan, M.H. Xie, C.H. Jin
    2D Materials, Vol.10(3), 035010:1-8, 2023
  • 3 Substrate Effect on Band Bending of MoSe2 Monolayer Near Mirror-Twin Domain Boundaries
    M.F. Yuan, J.Q. Zhang, X.Y. Yue, Y.P. Xia, Y.J. Jin, W.K. Ho, M.H. Xie
    Advanced Electronic Materials, Vol.9(7), 2300112:1-7, 2023
  • 4 Niobium and rhenium doping in MoSe2 monolayer during molecular beam epitaxy: Shallow dopants and defect proliferation
    J.Q. Zhang, Y.P. Xia, Z.B. Yu, X.Y. Yue, Y.J. Jin, M.F. Yuan, Y. Feng, B. Li, B. Wang, W.K. Ho, C. Liu, H. Xu, C.H. Jin, M.H. Xie
    APL Materials, Vol.11(7), 071113:1-7, 2023
  • 5 Wafer-scale single-crystalline MoSe2 and WSe2 monolayers grown by molecular-beam epitaxy at low-temperature— the role of island-substrate interaction and surface steps
    Y.P. Xia, D.G. Ding, K. Xiao, J.Q. Zhang, S.G. Xu, D.L. He, X.Y. Yue, Q. Rao, X. Wang, S.J. Ding, G.Y. Gao, H.X. Xue, Y.Y. Wang, M.F. Yuan, W.K. Ho, D.K. Ki, H. Xu, X.D. Cui, C.H. Jin, M.H. Xie
    Natural Sciences, Vol.3(2), 20220059:1-10, 2023
  • 6 Metal-phosphorus network on Pt(111)
    J.Q. Zhang, X.X. Dong, S.G. Xu, Y.P. Xia, W.K. Ho, H. Xu, M.H. Xie
    2D Materials, Vol.9(4), 045002:1-6, 2022
  • 7 Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate
    D.G. Ding, S. Wang, Y.P. Xia, P. Li, D.L. He, J.Q. Zhang, S.W. Zhao, G.H. Yu, Y.H. Zheng, Y. Cheng, M.H. Xie, F. Ding, C.H. Jin
    ACS Nano, Vol.16(10), 17356-17364, 2022
  • 8 Orientation-Engineered Small-Molecule Semiconductors as Dopant-Free Hole Transporting Materials for Efficient and Stable Perovskite Solar Cells
    Z.W. Zhou, Q.S. Wu, R. Cheng, H. Zhang, S.J. Wang, M.J. Chen, M.H. Xie, P.K.L. Chan, M. Gratzel, S.P. Feng
    Advanced Functional Materials, Vol.-, 2011270:1-13, 2021
  • 9 Large-Area Tellurium/Germanium Heterojunction Grown by Molecular Beam Epitaxy for High-Performance Self-Powered Photodetector
    B.N. Zheng, Z.H. Wu, F. Guo, R. Ding, J.F. Mao, M.H. Xie, S.P. Lau, J.H. Hao
    Advanced Optical Materials, Vol.9(20), 2101052:1-9, 2021
  • 10 Single-layer Mo5Te8 — A new polymorph of layered transition-metal chalcogenide
    J.Q. Zhang, Y.P. Xia, B. Wang, Y.J. Jin, H. Tian, W.K. Ho, H. Xu, C.H. Jin, M.H. Xie
    2D Materials, Vol.8, 015006:1-7, 2020
  • 11 Charge Density Modulation and the Luttinger Liquid State in MoSe2 Mirror Twin Boundaries
    Y.P. Xia, J.Q. Zhang, Y.J. Jin, W.K. Ho, H. Xu, M.H. Xie
    ACS Nano, Vol.14, 10716-10722, 2020
  • 12 Two-Dimensional Metal-Phosphorus Network
    H. Tian, J.Q. Zhang, W.K. Ho, J.P. Xu, B.W. Xia, Y.P. Xia, J. Fan, H. Xu, M.H. Xie, D.S.Y. Tong
    Matter, Vol.2(1), 111-118, 2020
  • 13 Quantum Confined Tomonaga−Luttinger Liquid in Mo6Se6 Nanowires Converted from an Epitaxial MoSe2 Monolayer
    Y.P. Xia, B. Wang, J.Q. Zhang, Y.J. Jin, H. Tian, W.K. Ho, H. Xu, C.H. Jin, M.H. Xie
    Nano Letters, Vol.20(3), 2094-2099, 2020
  • 14 Niobium doping induced mirror twin boundaries in MBE grown WSe2 monolayers
    B. Wang, Y.P. Xia, J.Q. Zhang, H.-P. Komsa, M.H. Xie, Y. Peng, C.H. Jin
    Nano Research, Vol.13, 1889-1896, 2020
  • 15 Distinct Topological Surface States on the Two Terminations of MnBi4Te7
    X.F. Wu, J.Y. Li, X.M. Ma, Y. Zhang, Y.T. Liu, C.S. Zhou, J.F. Shao, Q.M. Wang, Y.J. Hao, Y. Feng, E.F. Schwier, S. Kumar, H.Y. Sun, P.F. Liu, K. Shimada, K. Miyamoto, T. Okuda, K.D. Wang, M.H. Xie, C.Y. Chen, Q.H. Liu, C. Liu, Y. Zhao
    Physical Review X, Vol.10(3), 031013:1-10, 2020
  • 16 Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2−MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy
    Y.W. Dai, X.B. Ren, J.Q. Zhang, J. Liu, H.J. Liu, W.K. Ho, X.Q. Dai, C.H. Jin, M.H. Xie
    ACS Applied Materials & Interfaces, Vol.11(46), 43766-43773, 2019
  • 17 A Shallow Acceptor of Phosphorous Doped in MoSe2 Monolayer
    Y.P. Xia, J.Q. Zhang, Z.B. Yu, Y.J. Jin, H. Tian, Y. Feng, B. Li, W.K. Ho, C. Liu, H. Xu, C.H. Jin, M.H. Xie
    Advanced Electronic Materials, Vol.-, 1900830:1-7, 2019
  • 18 MgFe compounds for water purification: the effect of annealing temperature on lead removal performance
    T.L. Leung, C.S. Kam, Q. Sun, A.B. Djurišić, M.H. Xie, W.K. Chan, H.K. Li, Y. Zhou, K. Shih
    Desalination and Water Treatment, Vol.137, 183-193, 2019
  • 19 Room-temperature ferroelectricity in MoTe2 down to the atomic monolayer limit
    S.G. Yuan, X. Luo, H.L. Chan, C.C. Xiao, Y.W. Dai, M.H. Xie, J.H. Hao
    Nature Communications, Vol.10, 1775:1-6, 2019
  • 20 Hole doping in epitaxial MoSe2 monolayer by nitrogen plasma treatment
    Y.P. Xia, B. Wang, J.Q. Zhang, Y. Feng, B. Li, X.B. Ren, H. Tian, J.P. Xu, W.K. Ho, H. Xu, C. Liu, C.H. Jin, M.H. Xie
    2D Materials, Vol.5(4), 041005:1-8, 2018
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