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Past Events
Electrical Characterization of Semiconductor Nanostructures
| Speaker: | Prof. Christian TEICHERT |
| Affiliation: | Institute of Physics, University of Leoben, Austria |
| Date: | January 11, 2010 (Mon) |
| Time: | 4:00-5:00 p.m. |
| Venue: | Room 522, 5/F, Chong Yuet Ming Physics Building, HKU |
Abstract:
The Scanning Probe Microscopy group at the Institute of Physics of the University of Leoben focuses its efforts on the morphological and electrical characterization of semiconductor nanostructures, both inorganic and organic ones. Here, I will report on electrical characterizations on the nanometer scale using Conductive Atomic-Force Microscopy (C-AFM) which operates in contact mode. Two-dimensional current maps are measured simultaneously to the morphology and local current voltage maps can be recorded as well. We applied the technique to dielectric thin films as silicon and high-k gate oxides [1,2] as well as to organic and inorganic semiconductor layers [3] and piezoelectric materials including free standing ZnO nanorods [4].
[1] S. Kremmer, C. Teichert, E. Pischler, H. Gold, F. Kuchar, M. Schatzmayr, Surf. Interf. Anal. 33 (2002) 168.
[2] S. Kremmer, H. Wurmbauer, C. Teichert, G. Tallarida, S. Spiga, C. Wiemer, M. Fanciulli, J. Appl. Phys. 67 (2005) 074315.
[3] P. Tejedor, L. Díez-Merino, I. Beinik, C. Teichert, Appl. Phys. Lett. 95 (2009) 123103.
[4] G. Brauer, W. Anwand, D. Grambole, W. Egger, P. Sperr, I. Beynik, L. Wang, C. Teichert, J. Kuriplach, J. Lang, S. Zviagin, E. Cizmar, C. C. Ling, Y. F. Hsu, Y. Y. Xi, X. Chen, A. B. Djurišić, W. Skorupa, Phys. Status Solidi C 6 (2009) 2556.
Coffee and tea will be served 20 minutes prior to the seminar.