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Public Seminar of RPg Student:
Fabrication and Characterization of High-Performance Halide Perovskite Light Emitting Devices


Speaker:Mr. Xinshun QIN
Affiliation:The University of Hong Kong
Date:June 10, 2020 (Wednesday)
Time:10:30 a.m.
Venue:Room 522, 5/F, Chong Yuet Ming Physics Building, HKU

Abstract
 

As the requirements and expectation for displays in society are growing, higher standards of the display technology need to be investigated. Perovskites as a class of materials that are easily synthesized and relatively low-cost, are considered to play a significant role in next generation displays. In recent years, the emergence of metal halide perovskites has come with numerous advantages, including tunable band gap, high mobility for holes and electrons and intrinsically high photoluminescence quantum yield. However, the performance of perovskite-based light-emitting diodes (PeLEDs) still has great potential to improve, particularly the stability which has been a major obstacle for PeLEDs to overcome. We propose to synthesize new Dion−Jacobson (DJ) type perovskites materials and well control the grain size and composition. With appropriate passivation/additive/doping treatment, exceptional emitters which have superior optical and electrical properties can be obtained. Based on the exceptional emitters, PeLEDs are fabricated and characterized. The attractive properties of perovskite materials can be translated into high device performance with suitable hole transport layer (HTL) and electron transport layer (ETL). On the device side, we focus on the interfacial engineering and energy alignment to enhance the device performance.

Anyone interested is welcome to attend.