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Past Events
Public Seminar of RPg Student:
The Growth of Group IV-V 2D Materials by Molecular Beam Epitaxy
Speaker: | Mr. Ze MEN |
Affiliation: | The University of Hong Kong |
Date: | May 2, 2018 (Wednesday) |
Time: | 4:30 p.m. |
Venue: | Rm 522, 5/F, Chong Yuet Ming Physics Building, HKU |
Abstract
Group IV and Group V arouse great interests in 2D materials area. Many articles predicted some of IV-V compounds exist in layered form and have some properties especially attractive in optical and transport applications. These IV-V materials still have not drawn main attention in experimental research. So growth experiments by Molecular-Beam Epitaxy (MBE) will be an interesting and original endeavor to test the theoretical prediction. We plan to epitaxially grow GeAs/GeN/GeP/GeSb/SiP by MBE and if successful, characterize their electronic properties by STM, ARPES, STEM, for example. I will discuss the significance of this project and specify the steps of the growth process.
Anyone interested is welcome to attend.