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Public Seminar of RPg Student:
The Growth of Group IV-V 2D Materials by Molecular Beam Epitaxy


Speaker:Mr. Ze MEN
Affiliation:The University of Hong Kong
Date:May 2, 2018 (Wednesday)
Time:4:30 p.m.
Venue:Rm 522, 5/F, Chong Yuet Ming Physics Building, HKU

Abstract
 

Group IV and Group V arouse great interests in 2D materials area. Many articles predicted some of IV-V compounds exist in layered form and have some properties especially attractive in optical and transport applications. These IV-V materials still have not drawn main attention in experimental research. So growth experiments by Molecular-Beam Epitaxy (MBE) will be an interesting and original endeavor to test the theoretical prediction. We plan to epitaxially grow GeAs/GeN/GeP/GeSb/SiP by MBE and if successful, characterize their electronic properties by STM, ARPES, STEM, for example. I will discuss the significance of this project and specify the steps of the growth process.  

Anyone interested is welcome to attend.